http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170030439-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2021-60187 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02263 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-403 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45578 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2016-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a0b5c5d6420b5b689d2809e74c142e12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a90c1cb608c9ba3f939cfea17a93dfc4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c522cb827d1e70722bd51fb056839b7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78751ee94e5123331032993fff661acd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a229a3f1e708ef4703f69c8ac32aa2c3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d95ca182880d859ec26641812209248e |
| publicationDate | 2017-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20170030439-A |
| titleOfInvention | Method of manufacturing semiconductor device, substrate processing apparatus and program |
| abstract | A film is efficiently formed by sufficiently supplying a source gas to substrates accommodated in a process chamber, and in-plane uniformity of the film formed on the substrates is improved. The method of manufacturing a semiconductor device for forming a film on a substrate includes: a first step of supplying a source gas to an upper region of a process chamber from a first gas supply hole disposed at a front end of a first nozzle serially disposed along a lamination direction of the substrate in a lower region of the process chamber where the source gas is not pyrolyzed, in which the process chamber receives a plurality of substrates stacked in a vertical direction; a second step of supplying the source gas toward the substrates disposed in the lower region and a middle region of the process chamber from a plurality of second gas supply holes of a second nozzle serially disposed along the lamination direction of the substrate in the lower region, in which the second gas supply holes are disposed in a position facing the substrates disposed in the lower region and the middle region; and a third step of supplying a reactive gas from a plurality of third gas supply holes of a third nozzle serially disposed along the lamination direction of the substrate from the lower region to an upper region of the process chamber, in which the third gas supply holes are disposed in a position facing the substrates disposed from the lower region to the upper region. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200054818-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200011022-A |
| priorityDate | 2015-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 140.