Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02334 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02315 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02296 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32403 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32422 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32623 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0227 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02057 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66803 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-223 |
filingDate |
2015-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a861bda94d3ae79e3a2a39989519a1d9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78e08906f4cf6a1a02c756f43948f2c6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23b76f11eb5d512ca88962d4037a1290 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d04be56a9d142d17374c31321a508079 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_87604ba5f1994dae60d3a7d26c1046a0 |
publicationDate |
2017-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20170026599-A |
titleOfInvention |
Method and apparatus for selective deposition |
abstract |
For fin field effect transistors (FinFETs), methods are provided for forming fin structures with desired materials formed on different locations of a fin structure using an optional deposition process. In one embodiment, a method of forming a structure having desired materials on a substrate includes the steps of: providing a substrate having a three-dimensional (3D) structure formed on the substrate while performing an implantation process to dope the first region of the 3D structure; And depositing a first material. The first material can be removed and the second material can be deposited on the 3D structure. The second material may be selectively grown on the second region of the 3D structure. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220032034-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200111103-A |
priorityDate |
2014-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |