| abstract |
Embodiments of the present disclosure are directed to methods and apparatus for electroplating one or more materials on a substrate. In many cases, the material is a metal and the substrate is a semiconductor wafer, although embodiments are not limited thereto. Typically, embodiments of the present disclosure utilize a channel-type plate located near a substrate, and are formed on the bottom by a channel-type plate, on the top by a substrate, and on a side by a cross- Create a crossflow manifold. There is also an edge flow element configured to direct electrolyte generally into a corner formed between the substrate and the substrate holder. During plating, the fluid enters the intersecting flow manifolds both laterally through the channels in the channeled plate and laterally through the crossflow side inlet located on one side of the crossflow limiting ring. The flow paths combine within the cross flow manifold and exit at the cross flow outlet located opposite the cross flow inlet. These combined flow paths and edge flow elements create improved plating uniformity, especially around the periphery of the substrate. |