| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9d98762490c9bfd1551fefe55f49ea2c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12041 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-20 |
| filingDate |
2015-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99d4a80c728c6e29c9eff3f6af5fe60b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d9269fded2f3c508daaef4ed675b57e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_019890f893f90920ff5b18455da9c1eb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_286da0965f6a995303da5feb10479e72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f0fe52a5b1bc63ca6c76dfdbe213726
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6644f5dead838cc96f46783d88208a27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ea49525ba565d570414318184acfef2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f7b95407ade1880461b1ed1f2796bb38 |
| publicationDate |
2017-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20170021974-A |
| titleOfInvention |
Semiconductor ultraviolet light emitting device |
| abstract |
A first AlN layer having a plurality of nano rods arranged on the substrate, a second AlN layer disposed on the first AlN layer such that voids exist between the plurality of nano rods, A first conductive type nitride layer disposed on the second AlN layer and having a first conductive type AlGaN layer; a second conductive type nitride layer disposed on the first conductive type nitride layer, the first conductive type nitride layer having Al x In y Ga 1 -xy N And a second conductivity type nitride layer disposed on the active layer and having a second conductivity type AlGaN layer, wherein the active layer has a quantum well (0? X + y? 1, 0? Y <0.15) (D) of the plurality of nano rods satisfies 3.5? N (?) D /?? 5.0 when the refractive index of the light having the specific wavelength? And a semiconductor ultraviolet light emitting element. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200053860-A |
| priorityDate |
2015-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |