| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66439
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66469
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-201
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-775
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| filingDate |
2013-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be838bfc2d950624fa685a5ee97dd0a6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4b37c55314f2162dd29203de7b4693e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ab9a229c3a437f1b349643339106c6b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7a5c53cc886427c0f191656e3694f6b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_72c6ae33bcd63f4028fcdee8775fc4de
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09ea67f852809d6bc9a9a259c2d25fd0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc268ad00546a86c3211f9cd5314d59e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e980122b0937ebb79125f5638c94801
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f67b0212f6fd1b4f0e5143f7afd92ad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74397d67160156d81f6e42ac8d3de65c |
| publicationDate |
2017-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20170021372-A |
| titleOfInvention |
Non-planar semiconductor device having channel region with low band-gap cladding layer |
| abstract |
A non-planar semiconductor device having channel regions with low band gap cladding layers is described. For example, a semiconductor device includes a vertical configuration of a plurality of nanowires disposed on a substrate. Each nanowire includes an inner cladding layer having a first bandgap and an outer cladding layer surrounding the inner cladding layer. The cladding layer has a lower second band gap. The gate stack is disposed on the channel region of each of the nanowires and completely surrounds the channel region of each of the nanowires. The gate stack includes a gate dielectric layer disposed on the cladding layer and surrounding the cladding layer, and a gate electrode disposed on the gate dielectric layer. The source and drain regions are disposed on either side of the channel regions of the nanowires. |
| priorityDate |
2012-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |