| abstract |
A semiconductor device structure is provided. The semiconductor device structure includes a first semiconductor substrate having a first surface, a second surface, and a recess. The second surface is opposite the first surface. The concave portion passes through the first semiconductor substrate. The semiconductor device structure includes a first wiring layer on the second surface. The semiconductor device structure includes a first bonding pad in the recess, the first bonding pad extending to the first wiring layer to be electrically connected to the first wiring layer. The semiconductor device structure includes a nickel layer over the first bonding pad. The semiconductor device structure includes a gold layer over the nickel layer. |