http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170019165-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12041 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-382 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-387 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38 |
| filingDate | 2015-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1545937c74f3fb38fc626e3a59e5c424 |
| publicationDate | 2017-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20170019165-A |
| titleOfInvention | Light emitting device and light emitting device package |
| abstract | Embodiments relate to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting device. The light emitting device of the embodiment includes a lower electrode, a light emitting structure including a first conductive type semiconductor layer located on the lower electrode and including a first conductive type dopant, a second conductive type semiconductor layer including an active layer and a second conductive type dopant A first window semiconductor layer disposed between the lower electrode and the light emitting structure and including a second conductive dopant; an upper electrode disposed on the light emitting structure; and a first conductive dopant positioned between the light emitting structure and the upper electrode, The first window semiconductor layer is in direct contact with the second conductivity type semiconductor layer and the second window semiconductor layer is in direct contact with the first conductivity type semiconductor layer and is in contact with the first conductivity type semiconductor layer A high doping concentration and a thick thickness. |
| priorityDate | 2015-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.