| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e3ec5c18d785957632753fc07c152f9f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12041 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-44 |
| filingDate |
2015-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd7f8f4ce9078cbc150d5d8cee71bb88
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_251615d73019ae355e35f75bc1a9b817
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46c6c45b35e624a935092ee01aa3d588 |
| publicationDate |
2017-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20170018239-A |
| titleOfInvention |
Flip type nitride semiconductor light emitting diode and method of manufacturing the same |
| abstract |
A flip type nitride semiconductor light emitting device and a manufacturing method thereof are disclosed. A flip-type nitride semiconductor light emitting device according to the present invention includes: a light emitting structure having a first conductive type nitride layer, an active layer, and a second conductive type nitride layer which are sequentially stacked on a substrate; A reflective layer and a metal diffusion barrier layer sequentially formed on the second conductivity type nitride layer of the light emitting structure; A first bonding pad electrically connected to the light emitting structure and surrounding the edge except for a central portion of the light emitting structure; A first bump electrically connected to the first bonding pad and formed on one side of the light emitting structure; And a second bump electrically connected to the reflective layer or the metal diffusion barrier layer and formed on the other side of the light emitting structure. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180125192-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112823427-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112823427-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018212482-A1 |
| priorityDate |
2015-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |