| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-162
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-073
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14627
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14634
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49503
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-495
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 |
| filingDate |
2015-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d291fa1073faf1f038eda4b6aa68656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d70f842d9e7761f41192a6740c51c623
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_263c486510364919111a2c9fa6df6497 |
| publicationDate |
2017-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20170017383-A |
| titleOfInvention |
Integrated circuit device having through-silicon via structure |
| abstract |
The integrated circuit device includes a first substrate, a first structure including a first interlayer insulating film structure formed on a front surface of the first substrate and including a plurality of first conductive pad layers spaced at different levels, A second structure including a second interlayer insulating film structure formed on a front surface of the second substrate facing the front surface of the first substrate and bonded to the first interlayer insulating film structure; And a TSV structure penetrating the structure and contacting at least two first conductive pad layers located at different levels among the plurality of first conductive pad layers. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190078034-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210000576-U |
| priorityDate |
2015-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |