Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8221 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1259 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-13 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1207 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
filingDate |
2014-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3dfc9b8aa7bfa16ae8882a994e04144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3bca60e11ea5cabf6bf9d4c65da0e3a6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_484aa8851b89f61c62677d2f7eeda646 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75c6267d8c775da162e94c833c3742ac http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62bda92ebb6b753395cadcd2de2ad402 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d81266c9f5821a53bb7cad525277661b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8dc6f0b43a117ced93dcef9526c3ffd |
publicationDate |
2017-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20170015292-A |
titleOfInvention |
Semiconductor device, manufacturing method thereof, and electronic device |
abstract |
A semiconductor device of the present invention includes a first layer including a first transistor, a second layer including a first insulating film over the first layer, a third layer including a second insulating film over the second layer, And a fourth layer comprising the second transistor above. The first conductive film electrically connects the first transistor and the second transistor to each other through an opening provided in the first insulating film. The second conductive film electrically connects the first transistor, the second transistor, and the first conductive film to each other through an opening provided in the second insulating film. The channel forming region of the first transistor includes a single crystal semiconductor. The channel forming region of the second transistor includes an oxide semiconductor. The width of the bottom surface of the second conductive film is 5 nm or less. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11417771-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10516060-B2 |
priorityDate |
2014-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |