http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170015292-A

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publicationDate 2017-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20170015292-A
titleOfInvention Semiconductor device, manufacturing method thereof, and electronic device
abstract A semiconductor device of the present invention includes a first layer including a first transistor, a second layer including a first insulating film over the first layer, a third layer including a second insulating film over the second layer, And a fourth layer comprising the second transistor above. The first conductive film electrically connects the first transistor and the second transistor to each other through an opening provided in the first insulating film. The second conductive film electrically connects the first transistor, the second transistor, and the first conductive film to each other through an opening provided in the second insulating film. The channel forming region of the first transistor includes a single crystal semiconductor. The channel forming region of the second transistor includes an oxide semiconductor. The width of the bottom surface of the second conductive film is 5 nm or less.
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