| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5ad8562c578b061df7a2c3aee9d0e24 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10722
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1443 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2015-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_85d9daacbf50a7eb0010fc00ddafbde7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e51a634d53277aa4baa2afd7ff11165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f78bf4e0e4621c94c8ab7483fb6d65a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10056e66a14c987ca483b7b73c0670e6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea35d8ecf880e9152f458c92abba469e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_992ba792655e6ece856ffe907d07a87c |
| publicationDate |
2017-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20170014966-A |
| titleOfInvention |
2-Dimensional laminated composite structured bistable non-volatile memory device and methods of manufacturing the same |
| abstract |
A lower electrode formed on a substrate; A lower insulating layer, an active layer and an upper insulating layer sequentially formed on the lower electrode; And an upper electrode formed on the upper insulating layer, wherein the active layer comprises molybdenum disulfide (MoS 2 ) grown by chemical vapor deposition, and the lower and upper insulating layers are formed by hexagonal nitridation grown by chemical vapor deposition A bistable non-volatile memory device is provided which comprises boron (h-BN). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107170711-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115418714-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190061896-A |
| priorityDate |
2015-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |