| abstract |
The light emitting device according to the present invention includes a light emitting structure including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer, a passivation layer for protecting the light emitting structure, and a metal layer formed between the passivation layers on the light emitting structure , And the distance between the passivation layer and the metal layer is four times or more and 12 times or less the thickness of the passivation layer. |