http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170004544-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12041 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-36 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12 |
| filingDate | 2015-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_054644cf3a0f4b00dcbdcf520b2c4e2f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_800d8a2943deaf1c58f620cf99a39baa |
| publicationDate | 2017-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20170004544-A |
| titleOfInvention | Light emitting device and light unit having thereof |
| abstract | An embodiment relates to a light emitting element. The light emitting device disclosed in the embodiment includes: a first conductive semiconductor layer; An active layer disposed on the first conductive semiconductor layer and having a plurality of barrier layers and a plurality of well layers; A plurality of superlattice layers disposed under the first conductive semiconductor layer; And a second conductive semiconductor layer on the active layer, wherein the plurality of superlattice layers includes a first superlattice layer and a second superlattice layer disposed between the first superlattice layer and the first conductive semiconductor layer, Wherein the first superlattice layer comprises a plurality of pairs of first and second layers and the second superlattice layer comprises a plurality of third and fourth layer pairs, AlN, wherein the second to fourth layers comprise AlGaN-based semiconductors, the third and fourth layers have an aluminum composition higher than the aluminum composition of the second layer, and the active layer emits ultraviolet wavelengths. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200013302-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020005006-A1 |
| priorityDate | 2015-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 46.