| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c63bc5ef3ae590b0603de4587961cac3 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01072 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31645
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02362
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
2015-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20e44c7ae91749a7929c154412cd96a6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9207b4057693d168371c36d51327f91e |
| publicationDate |
2017-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20170004274-A |
| titleOfInvention |
Method of fabricating hafnium oxide and semiconductor device having the same |
| abstract |
According to an embodiment of the present invention, provided is a method of fabricating a hafnium oxide film and a method for manufacturing a semiconductor device using the same. According to an embodiment of the present invention, the method of fabricating the hafnium oxide film includes the steps of: providing a substrate; forming an initial hafnium oxide film, which has am amorphous and monoclinic crystal structure or a mixed structure thereof, on the substrate; phase-transferring the initial hafnium oxide film into a tetragonal hafnium oxide film by heating the initial hafnium oxide film at the temperature equal to or higher than the phase transition temperature of tetragonal hafnium oxide; and rapidly cooling the heated tetragonal hafnium oxide film to restrain the nucleation and the growth of monoclinic hafnium oxide in the tetragonal hafnium oxide film. Therefore, the tetragonal hafnium oxide film, which is thermodynamically unstable at room temperature, is easily fabricated. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190062031-A |
| priorityDate |
2015-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |