http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170000116-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12041 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-14 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 |
filingDate | 2015-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c86100390fd499b565962bec402d959 |
publicationDate | 2017-01-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20170000116-A |
titleOfInvention | Light emitting device and light emitting device package having thereof |
abstract | An embodiment relates to a light emitting element. The light emitting device disclosed in the embodiment includes: a first conductive semiconductor layer having a dopant of a first conductivity type; An active layer having a plurality of barrier layers and a plurality of well layers on the first conductive semiconductor layer; An electron blocking layer disposed on the active layer; A second conductive semiconductor layer disposed on the electron blocking layer; And an electron confinement layer having a quantum well structure between the electron blocking layer and the second conductive semiconductor layer. |
priorityDate | 2015-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.