| abstract |
A semiconductor light emitting device according to an embodiment of the present invention includes a substrate and a convex portion projecting from the substrate and including a first layer made of a material different from that of the substrate and a second layer made of a material different from the substrate on the first layer, . Here, the height of the second layer may be higher than the height of the first layer, and the height of the first layer may be 240 nm to 380 nm. |