http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160149496-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12041 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 |
filingDate | 2015-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d49e009a8b622359583f2b7bb856f4a0 |
publicationDate | 2016-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20160149496-A |
titleOfInvention | Light emitting device and lighting system having the same |
abstract | The light emitting device according to an embodiment includes a substrate, a first conductive type semiconductor layer on the substrate, an active layer including a well layer and a barrier layer on the first conductive type semiconductor layer, Wherein the barrier layer comprises a first barrier layer comprising indium, a second barrier layer and a third barrier layer having different contents of aluminum on the first barrier layer, A first barrier protrusion disposed between the first barrier layer and the second barrier layer, and a second barrier protrusion disposed between the second barrier layer and the third barrier layer. The embodiment has the effect of preventing overshooting of carriers passing through the well layer / barrier layer by forming the well layer and the barrier layer to have different In and Al contents. |
priorityDate | 2015-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.