| abstract |
An oxide sintered body capable of achieving a low carrier concentration and a high carrier mobility when an oxide semiconductor thin film is formed by a sputtering method, and a sputtering target using the oxide sintered body. This oxide-sintered body contains indium, gallium and copper as oxides. Wherein a content of gallium is 0.08 or more and less than 0.20 in terms of Ga / (In + Ga) atomic ratio, the content of copper is 0.001 or more and less than 0.03 in terms of Cu / (In + Ga + Cu) atomic ratio, It is preferable to calcine. The oxide semiconductor thin film of a crystalline form of the oxide sintered body for a sputtering target is, the carrier density of 1.0 × 10 18 cm -3 or less, the carrier mobility of 10 ㎠V - 1 sec -1 or higher can be obtained. |