| abstract |
The high dielectric constant gate dielectric interface with the III-V semiconductor surface of the non-planar transistor channel region is doped non-directionally with nitrogen. In the nanowire embodiments, the non-directional nitrogen doping of the high dielectric constant gate dielectric interface is performed before or simultaneously with the deposition of the conformal gate electrode by exposing it to a nitrogen source in liquid, vapor, gas, plasma, or solid state. In embodiments, the gate electrode metal is conformally deposited over the gate dielectric and annealing is performed to uniformly accumulate nitrogen in the gate dielectric along the non-planar III-V semiconductor interface. |