http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160143289-A

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-5296
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-52
filingDate 2015-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_85fabd2261d6f20e02c56859339e0e1c
publicationDate 2016-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20160143289-A
titleOfInvention Efficient vertical type organic light-emitting transistor devices
abstract Disclosed are a vertical organic light emitting transistor device and a vertical transistor device, which provide excellent current flow, luminance, and luminous efficiency by having a structure of a vertical transistor including a conductive electrode having a low dimensional electron structure in which Dirac point energy is pre-adjusted. The vertical transistor device comprises: source and drain electrodes disposed to oppose each other, receiving current from an external power source, and supplying holes and electrons, respectively; a light emitting layer disposed between the source and drain electrodes, and generating and emitting electron-hole exciton with the received holes and electrons; and an insulating layer and a third gate electrode sequentially formed on an external surface of one selected from the group consisting of the source and drain electrodes. A voltage for the selected one is applied to the third gate electrode, so that a current flow and an EL light emitting effect can be adjusted. The selected one is a conductive electrode having a low dimensional electron structure, is applied to a device in a state in which its unique Dirac point energy is pre-adjusted with physical and chemical pretreatment to adjust efficiently electric field-induced Fermi level shifting of the selected one.
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