| abstract |
Methods are provided for forming a passivation blank structure on a metal line layer formed in an insulating material in a wiring structure. In one embodiment, a method for forming a passivation blanket on a metal line in a wiring structure for semiconductor devices comprises: in a processing chamber included in the multi-chamber processing system, a dielectric bulk insulation Selectively forming a metal capping layer on the metal line defined by the layer, forming the barrier layer in-situ on the substrate in the processing chamber, wherein the barrier layer is a metal dielectric layer, and in a multi-chamber processing system And forming a dielectric capping layer on the barrier layer. |