| abstract |
The thin film transistor panel according to the present invention comprises a substrate, a gate electrode disposed on the substrate, A gate insulating film disposed between the gate electrode and the semiconductor layer and including a first oxide insulating film in contact with the semiconductor layer, a source electrode located on the semiconductor layer, And a second oxide insulating film covering the drain electrode, the source electrode, and the drain electrode, and contacting the source electrode and the drain electrode, wherein at least one of the first oxide insulating film and the second oxide insulating film The hydrogen content distribution in the direction of thickness in the thickness direction is discontinuously formed. |