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filingDate 2016-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2016-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20160128278-A
titleOfInvention Method for manufacturing a semiconductor device
abstract The present invention provides a display device having excellent display characteristics, in which a pixel circuit and a driver circuit on the same substrate are formed of transistors different in structure from each other in accordance with the characteristics of the circuit. The driving circuit section has a driver circuit transistor in which the gate electrode layer, the source electrode layer and the drain electrode layer are made of a metal film and the channel layer is made of an oxide semiconductor. Further, the pixel portion has a transistor for a pixel in which the gate electrode layer, the source electrode layer, and the drain electrode layer are composed of an oxide conductor and the semiconductor layer is made of an oxide semiconductor. The transistor for a pixel is formed of a material having translucency, and a display device having a high aperture ratio can be manufactured.
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