http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160127355-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_109869d32514a18c1dfe6b294bef8a7e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L41-047 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L41-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L41-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L41-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B31-0438 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-047 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B31-04 |
| filingDate | 2015-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04becb6d41c9487b59cd126b62352d03 |
| publicationDate | 2016-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20160127355-A |
| titleOfInvention | having one or more bending deformation of graphene that electric On/Off to control of the transistor and graphene single electron transistor and electron tunneling graphene transistor |
| abstract | The present invention is characterized in that one or more grapefine and drain electrodes are provided in a non-coplanar plane, one selected from among a Piezo (piezoe) material, a magnetic particle, One or more graphenes may be provided as one or more bending deformation owing to the voltage of the barrier adjusting circuit intersecting with the circuit of the at least one graphene to control the electricity on / off; b. Adjusting the height of the Fermi level of one or more graphenes between the at least one graphene and the drain electrode to adjust the electrical On / Off; The present invention provides a transistor for controlling on / off of electricity with at least one bending deformation of graphen. In addition, the present invention provides a method of controlling a voltage to be applied to one or more graphenes, in which one or more graphene and drain electrodes have non-identical planes, Wherein at least one graphene is provided with at least one bending deformation to control electrical on / off, wherein at least one of the graphene and the drain electrode has a fermi level Fermi level) to adjust the electrical On / Off; The present invention provides a transistor for controlling on / off of electricity with at least one bending deformation of graphen. In addition, the present invention is characterized in that, in the form of two electrodes composed of a drain electrode connected to a common island electrode through a tunnel junction and one or more graphenes connected to an insulating layer, one or more One or more graphenes and an insulating layer may be provided with at least one bending deformation due to the voltage of the Piezo material, the magnetic particles, the particles having the electric charge, and the voltage of the barrier adjusting circuit intersecting the circuit of the at least one graphen However, a. Tunneling the electrons to the island electrode, and b. A tunnel is located at the drain electrode, and c. The electrons reaching the Fermi level of the drain electrode; The present invention provides a graphene single electron transistor. The present invention also provides a method of manufacturing a semiconductor device including at least one Piezo material, a magnetic particle, a charge, a charge, and an electric charge, which are provided in a lower portion of at least one graphene in the form of at least one graphene and drain electrode having non- Wherein at least one graphene and an insulating layer are provided with at least one bending deformation due to the voltage of the barrier adjusting circuit intersecting the circuit of the at least one graphene, a. Passing one electron through a tunnel of an insulating layer provided between one or more graphene and drain electrodes, and b. Reaching the drain electrode; To The present invention provides an electron tunneling graphene transistor. |
| priorityDate | 2015-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.