| abstract |
Methods for filling gaps using high density plasma chemical vapor deposition (HDP CVD) are provided herein. According to various embodiments, to fill the gaps, amorphous carbon films and carbon-containing films such as amorphous carbide films are deposited into the gaps on the substrates by HDP CVD. The methods may involve the use of high hydrogen content process gases during HDP CVD deposition to provide bottom-up filling. A related apparatus is also provided. |