| abstract |
A thin film transistor panel according to an embodiment of the present invention includes a gate line including a gate electrode, a semiconductor layer formed of an oxide semiconductor located on the first substrate, a gate electrode located on the first substrate, A data wiring layer including a data line intersecting the data line, a source electrode connected to the data line, and a drain electrode facing the source electrode, a capping layer located on the data wiring layer, a light diffusion layer located on the capping layer, And the inclined film includes a silsesquioxane-based copolymer. |