| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89afae566b725ae78e20cf972d9bcdc7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66803 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02307
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02227
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02343 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 |
| filingDate |
2016-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_def1e66f171cfd7af0ff3e3817c4e5da |
| publicationDate |
2016-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20160118970-A |
| titleOfInvention |
Method for manufacturing semiconductor substrate |
| abstract |
The present invention is a method for manufacturing a semiconductor substrate in which a diffusion agent composition containing an impurity diffusion component is applied onto a semiconductor substrate and then the formed film is heated to diffuse the impurity diffusion component into the semiconductor substrate, A method of manufacturing a semiconductor substrate capable of diffusing an impurity diffusion component into a semiconductor substrate by application of a composition and a short-time heat treatment. When a composition comprising the impurity diffusion component (A) and the Si compound (B) having a predetermined structure having an isocyanate group is used as the diffusion agent composition, the diffusion agent composition is applied on the semiconductor substrate with a film thickness of 30 nm or less, Is heated for a short time by a predetermined method. |
| priorityDate |
2015-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |