| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_31b1220216408a6076f55e0ba4ec1003 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-511
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-11849
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-11901
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-51 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7624
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76243
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76297
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76281 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate |
2016-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e32d15f74a3a88baf98dd049482e947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d09215e4760be8d1e8d5118b48b89bc3 |
| publicationDate |
2016-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20160117346-A |
| titleOfInvention |
Process for fabricating a structure having a buried dielectric layer of uniform thickness |
| abstract |
The present invention relates to a method of fabricating a final structure (5) comprising sequentially a useful semiconductor layer (3 '), an insulating layer (2') and a carrier substrate (4) Providing an intermediate structure (1) comprising an insulating layer (3), an insulating layer (2) and a carrier substrate (4) and finishing the intermediate structure to form a final structure (5) Uniformly modifying the thickness of the layer (2). According to the invention, the insulating layer (2) of the intermediate structure (1) has a thickness profile which complements the determined dissolution profile. |
| priorityDate |
2015-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |