| abstract |
An object of the present invention is to provide a gas barrier film having a high gas barrier property and excellent bending resistance. On at least one of the gas barrier film of the present invention is a polymer substrate, a gas barrier film having the inorganic layer [A] and the silicon compound [B] from the polymer substrate side in this order, and the silicon compound [B] is at least SiN x A silicon compound having a structure represented by H y , SiO p N q , SiO a (OH) 4 -2a (x + y = 4, p + q = 4, a <2 x, y, p, , And the inorganic layer (A) and the silicon compound layer (B) are in contact with each other. |