| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_df4d1d681d9c274773d9eee6368eeb33 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-85
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-16 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-02 |
| filingDate |
2016-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af9e4592a0a9df9c28a12661e18980c0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5b59906d9467e16cb066e88abbf3663
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8701adce6710e58c8f3ce8a28bdaad9d |
| publicationDate |
2016-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20160113048-A |
| titleOfInvention |
PERPENDICULAR SPIN TRANSFER TORQUE (STT) MEMORY CELL WITH DOUBLE MgO INTERFACE AND CoFeB LAYER FOR ENHANCEMENT OF PERPENDICULAR MAGNETIC ANISOTROPY |
| abstract |
A magnetic tunnel junction (MTJ) for use in magnetoresistive random access memory (MRAM) includes a CoFeB alloy free layer located between the MgO tunnel barrier layer and the top MgO capping layer and a CoFeB alloy free layer between the MgO capping layer and the Ta cap Layer. The CoFeB alloy free layer has a high Fe content to introduce perpendicular magnetic anisotropy (PMA) at the interface with the MgO layer. In order to avoid the generation of unnecessary PMA in the enhancement layer due to the interface with the MgO capping layer, the enhancement layer has a low Fe content. After all layers are deposited on the substrate, the structure is annealed to crystallize MgO. The CoFeB alloy enhancement layer suppresses the diffusion of Ta from the Ta cap layer to the MgO capping layer and provides CoFeB to the MgO interface to produce MgO having good crystallinity. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112928202-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020256884-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11296276-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11621393-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112928205-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10923652-B2 |
| priorityDate |
2015-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |