http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160111649-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6f932d94618d9b875e401457b33e9761 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-00 |
filingDate | 2015-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f914ada416d1e8e54cf13bca26f91b0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_76e18c4f64dd0775ff0c2b3f723a1c57 |
publicationDate | 2016-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20160111649-A |
titleOfInvention | Etching composition for a metal |
abstract | The present invention relates to an etching solution composition for metal. More specifically, the present invention relates to an etching solution composition for metal, including an ammonium fluoride-based compound, alkanolamine, a glycol ether-based solvent, and water. The etching solution composition exhibits excellent etching speed for titanium nitride films and tungsten films, and can protect film quality without damage on magnesium oxide (MgO) existing on patterns during a semiconductor production process, thereby remarkably increasing reliability and productivity owing to enhanced etching properties in the semiconductor production process. |
priorityDate | 2015-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 130.