http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160109808-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_33c922e05f6133b7d72dbb849d77487d |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2015-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83fc446a397d03de5666cc577ab4d260 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4eef3bc4ebdfe3b8e99e7d9468fce59b |
| publicationDate | 2016-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20160109808-A |
| titleOfInvention | Reactor for Plasma Deposition of Reducing By-product Formation and Deposition Method Using the Same |
| abstract | The present invention relates to a plasma deposition reactor comprising an upper ground on which a reaction chamber is located and a lower ground on which a substrate or wafer to be deposited is located, wherein the reaction chamber of the upper ground comprises a gas or a gaseous precursor One or more gas inlets into which the precursor gas in the mixed form is introduced into the reaction chamber; A dielectric layer formed along the inner surface of the reaction chamber; An electrode formed along the inner surface of the dielectric layer; And a plate having a porous structure and positioned at a lower end of the reaction chamber and having a potential equal to that of the electrode, wherein the lower ground is formed by a gas or a residual gas of the precursor gas flowing into the reaction chamber, And the height of the hollow portion of the reaction chamber located at the upper end of the plate is set in a range of 0.01 mm to 4 mm so that plasma formation in the hollow portion is suppressed, A plasma deposition reactor suitable for production is provided. |
| priorityDate | 2015-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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