| abstract |
The present invention provides an oxide sintered body and a sputtering target using the oxide sintered body, which can obtain a low carrier concentration and a high carrier mobility when the oxide semiconductor thin film is formed by a sputtering method. This oxide-sintered body contains indium and gallium as oxides, contains nitrogen, and does not contain zinc. The content of gallium is not less than 0.20 and not more than 0.60 in terms of Ga / (In + Ga) atomic ratio, and does not substantially contain the GaN phase. Further, it is preferable not to have a Ga 2 O 3 phase. Oxide semiconductor thin film of amorphous oxide is formed by a sintered body as a sputtering target for the carrier concentration of 3 × 10 18 ㎝ -3 or less, the carrier mobility of 10 ㎝ 2 V - a 1 sec -1 or higher are obtained. |