http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160096374-A

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filingDate 2015-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e5d523f448f2921f8fb8356d853bfa52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7709f2d499b3653ce2e2341f033813bb
publicationDate 2016-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20160096374-A
titleOfInvention Layered Liquid Phase Pulsed Laser Ablation - Graphene, Phosphorus Manufacturing Method.
abstract In the present invention, one of the pure graphite flakes, pure expanded graphite flakes, pure graphite powder, or pure expanded graphite powder solidified pellets is selected to constitute pure graphene and natural semiconducting phosphorus, By using pulsed laser ablation method, one of the simpler and finer grained pure graphenes was formed, and one of the black / white flake, the expanded black flake, or the blackened or solidified consolidated black powder was selected Liquid phase pulsed laser ablation method to form a simpler, faster, and faster-sized natural semiconductor phospholene. Then, pure graphene and phospholin formed by the liquid phase pulse laser ablation method are adhered to the semiconductor phosphorous More effective porphin graphene to characterize the pin After D. Lin yes intended to configure the graphene nanowires, E Lin graphene nanowire airgel, F. Lin graphene silver wire substrate morpholine was added to the adhesive nanowires for use in the pin. [Index] Pure graphene, Phosphorus liquid phase pulse laser ablation, Porine graphene, Porine graphene nanowire.
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type http://data.epo.org/linked-data/def/patent/Publication

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