| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_517a04cc4bffc3d216b19f45c9bde10d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31056
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-06 |
| filingDate |
2015-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d01af64469598140f7e16b6718c7b7bb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9651b7b2b538d7220e91da39ca6fd33
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6143a00a4bf36d08e5f046ab4edacdc |
| publicationDate |
2016-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20160085569-A |
| titleOfInvention |
Solution for etching silicon oxide layer |
| abstract |
The present invention provides a silicon oxide film etching solution capable of selectively etching a silicon oxide film. According to the silicon oxide film etching solution of the present invention, the silicon oxide film can be etched without damaging the silicon film in the formation of the semiconductor pattern structure by including the silicon film corrosion inhibitor, so that the silicon oxide film can be usefully used in various semiconductor device processes. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200007461-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180122141-A |
| priorityDate |
2015-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |