| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-8001
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06541
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80948
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80896
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-97
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3114
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-486
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-9222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-561 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-19
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-97
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-92
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3114
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0655
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-561
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-486
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-78 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 |
| filingDate |
2015-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86d8eba25b0e8aff279337f61c584e88
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_26da5747510ce6baf6884ac1515d309d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac5dd826603ec114d8684436051c14d9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78411d2a892751be260f6bc60b8e630a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3818c9144160c950023016725c6f683c |
| publicationDate |
2016-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20160085184-A |
| titleOfInvention |
Semiconductor device and fabricating method thereof |
| abstract |
A semiconductor device and method are provided that use a single mask to form openings for substrate through vias as well as openings for dielectric through vias. In an embodiment, a contact etch stop layer is deposited over the first semiconductor device and the second semiconductor device, and between the first semiconductor device and the second semiconductor device. A dielectric material is deposited over the contact etch stop layer between the first semiconductor device and the second semiconductor device. Different materials of the contact etch stop layer and the dielectric material are used so that a single mask can be used to form the substrate through vias through the first semiconductor device and also to form dielectric through vias through the dielectric material. |
| priorityDate |
2015-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |