http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160071755-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2013-0054 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2013-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-79 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C7-1069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C14-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-1655 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-1673 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C14-009 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C7-06 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C13-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-26 |
| filingDate | 2014-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_916a2139c90d730a501b8e02361b56ec |
| publicationDate | 2016-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20160071755-A |
| titleOfInvention | Semiconductor memory device having separate sensing type of sensing circuit and therefore sensing method |
| abstract | The present invention discloses a sensing circuit of a semiconductor memory device. A sensing circuit according to the present invention includes a bit line connected between a first edge and a second edge and a sensing line coupled to the second edge of the bit line. The sensing circuit may further include a current supply for supplying a sensing current through the first edge of the bit line and a sensing circuit for sensing the sensing current when the sensing current flows from the first edge of the bit line to a selected one of the plurality of memory cells. And a sense amplifier for sensing data stored in the selected memory cell by comparing a sensing voltage appearing on the sensing line with a reference voltage. According to the present invention, since the sensing margin of the sense amplifier is assured without depending on whether the selected memory cell belongs to the near cell region or the far cell region, the number of memory cells connected per bit line is increased. |
| priorityDate | 2014-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.