| abstract |
The present invention relates to a removal composition for selectively removing a hard mask consisting essentially of TiN, TaN, TiNxOy, TiW, W, Ti, Ti alloy and W alloy from a semiconductor substrate against a low-k dielectric material. The semiconductor substrate comprises a low-k dielectric material and has a hard mask thereon of TiN, TaN, TiNxOy, TiW, W, Ti, Ti alloys or W alloys. The removal composition comprises from 0.1% to 90% by weight of an oxidizing agent; From 0.0001% to 50% by weight of carboxylate; And a remainder of up to 100 weight percent of the removal composition, including deionized water. |