| abstract |
A vertical gate allround device is formed by initially forming a first doped region and a second doped region that are planar with respect to each other. A channel layer is formed over the first doped region and the second doped region, and a third doped region is formed over the channel layer. The fourth doped region is formed to be planar with the third doped region, and wherein the first doped region, the second doped region, the third doped region, the fourth doped region, Are patterned to form a second nanowire, which are used to form a vertical gate allround device. |