| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1ed2a6e6c00447811257412836478db0 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7393
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-407
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-772
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-781
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-739 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-772
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2015-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78409c9ebe971154e4aa9a1f30adcfd5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6576a033fe92ab97d4b4624966793bc0 |
| publicationDate |
2016-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20160062715-A |
| titleOfInvention |
Power transistor with field-electrode |
| abstract |
A method of producing a semiconductor device and a semiconductor device is disclosed. The semiconductor device includes at least two transistor cells. At least two transistor cells each having a drain region, a drift region, and a body region in the semiconductor fin of the semiconductor body, a source region adjacent to the body region, and a gate region adjacent to the body region and separated from the body region by a gate dielectric And a field electrode that is separated from the drift region by the field electrode dielectric and is connected to the source region. The field electrode dielectric is arranged in a first trench between the semiconductor fin and the field electrode. The at least two transistor cells include a first transistor cell and a second transistor cell. The semiconductor pin of the first transistor cell is separated from the semiconductor pin of the second transistor cell by a second trench different from the first trench. |
| priorityDate |
2014-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |