| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1436
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1438 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32055
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02263
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2018
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02068 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 |
| filingDate |
2015-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c52a4109b4519fe1b8ffb1bb5db9d11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c1be1602f41405a9bc8d104415afcfef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59751372cb227f60426b980b438cbd0a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb77047d2cd5b0e0aecf1f209599d24c |
| publicationDate |
2016-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20160059952-A |
| titleOfInvention |
Method of manufacturing semiconductor device, substrate processing apparatus, gas supply system, program, three-dimensional flash memory, dynamic random access memory, and semiconductor device |
| abstract |
The film quality of the Si film to be formed is improved when the Si film is formed on the substrate where the insulating film is exposed on at least a part of the surface. A first silicon film formed by homoepitaxial growth of monocrystal silicon on a base of monocrystal silicon; a first silicon film formed on the insulating film and having a different crystal structure from the first silicon film; And a second silicon film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10529560-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180107729-A |
| priorityDate |
2014-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |