| abstract |
A semiconductor device includes an active pattern provided on a substrate,nAnd a gate electrode provided on the active pattern and crossing the active pattern. Wherein the active pattern comprises a first buffer pattern on the substrate, a channel pattern on the first buffer pattern, a doping pattern between the first buffer pattern and the channel pattern, and a second buffer pattern between the doping pattern and the channel pattern . The doping pattern includes graphene doped with impurities. |