Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdf3b6ced3d7710ec0bc0addb67a1cc9 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F2201-123 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-134309 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136286 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-1213 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-483 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06K19-0723 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
filingDate |
2014-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_949501fab1aab8582f126f6a2d4786ac |
publicationDate |
2016-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20160055883-A |
titleOfInvention |
Semiconductor device and manufacturing method thereof |
abstract |
A transistor having a high field-effect mobility is provided. A transistor is provided that has pseudo electrical characteristics. A transistor with a low off-state current (current in the off state) is provided. Alternatively, a semiconductor device including such a transistor is provided. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film over the oxide semiconductor film, and an oxide semiconductor film between the oxide semiconductor film and the conductive film via a first insulating film or a second insulating film. And a conductive film to be superimposed thereon. The composition of the oxide semiconductor film continuously changes between the first insulating film and the second insulating film. |
priorityDate |
2013-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |