| abstract |
The present invention relates to a method of manufacturing a semiconductor device comprising at least one kind of metal atom selected from the group consisting of titanium, tantalum, zirconium and tungsten, oxygen atoms bridging between the plurality of metal atoms and a polydentate ligand coordinated to the metal atom A metal compound, and a solvent, and has an absolute molecular weight of 8,000 or more and 50,000 or less as measured by a static light scattering method of the metal compound. It is preferable that the metal compound mainly includes a structure in which two bridging oxygen atoms are bonded to a metal atom. |