| abstract |
A semiconductor device includes a substrate having an active region of a first conductivity type, a drift region of a second conductivity type formed in the active region, a gate covering the active region on the drift region, a gate insulating film interposed between the active region and the gate, A second conductivity type drain region formed at a position spaced apart from the gate in the drift region and having a doping concentration higher than that of the drift region and a second conductivity type drain region formed between the gate region and the drain region in the drift region, And a source region of a first conductivity type formed in the first conductivity type shallow well region between the gate and the drain region and having a higher doping concentration than the first conductivity type shallow well region, . |