| abstract |
There is provided a method of manufacturing a semiconductor device comprising a step of forming a solder material containing at least tin between a material to be bonded having a nickel layer on its surface and a copper layer formed on at least a part of a surface of the nickel layer, And fusing and solidifying the solder material to form Cu 6 Sn 5 on the surface of the nickel layer by the tin in the solder material and the copper layer. |