abstract |
A semiconductor device includes: a semiconductor element; A member to be bonded bonded to a semiconductor element and having a nickel film formed thereon; And a bonding layer containing the copper element in a ratio of 2.0 wt% or more, wherein the bonding layer comprises: at least tin in the constituent elements of the base material, And a Cu 6 Sn 5 portion in contact with the nickel film. |