| abstract |
A first electrode and a second electrode facing each other, and a photoelectric conversion layer disposed between the first electrode and the second electrode, wherein the photoelectric conversion layer includes a p-type semiconductor compound and an n-type semiconductor compound, And an organic electrooptic device having an EQE of 40% or more at -3 V and an image sensor and an electronic device including the organic electrooptic device: [Equation 1] In Equation (1) "EQE at -3V" and "EQE at -2V" refer to external quantum efficiency (EQE) at -3V and -2V, respectively. |