http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160044638-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-08 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 |
| filingDate | 2014-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0139352b85ed4687ef8351a48bc95606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4cc23267719923f602f10f971c4748b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a82782f49b7937cdb8be48c3a38733ad http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_53f1bec3e5914a6f27f036c781da34ea http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b36986f837e5fbc816e4ef1bb4781ed9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_882cb98156036e477786bd45f735c9aa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b21afa5325c4ac7f197c2da86f8e55ee |
| publicationDate | 2016-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20160044638-A |
| titleOfInvention | Semiconductor light emitting device |
| abstract | The present invention provides a light emitting device comprising: a first conductivity type semiconductor layer; An active layer disposed on the first conductivity type semiconductor layer and comprising a plurality of quantum barrier layers and a plurality of quantum well layers alternately stacked; And a second conductivity type semiconductor layer disposed on the active layer, wherein a quantum barrier layer closest to the second conductivity type semiconductor layer among the plurality of quantum barrier layers includes a first undoped region and a second conductivity type semiconductor layer, And a first doped region disposed on the first undoped region and having a thickness greater than or equal to the thickness of the first undoped region, wherein each of the first undoped region and the first doped region is different And at least one hole accumulation region formed by alternately arranging a plurality of first unit layers having an energy bandgap. |
| priorityDate | 2014-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.