| abstract |
Positioning the plastic particles on a silicon substrate in a uniform random pattern, spaced apart from each other; Forming a catalyst layer between the plastic particles; Removing the plastic particles; Vertically etching a portion of the silicon substrate in contact with the catalyst layer; And removing the catalyst layer. ≪ IMAGE > According to the present invention, the process is simple and cost effective, can be mass-produced in a large area process, can manufacture nanowires in a resource-limited place, and can control the structure of the nanowires independently. |